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Twinning occurrence and grain competition in multi-crystalline silicon during solidification

type de publication      article dans une revue internationale avec comité de lecture
date de publication 2013
auteur(s) Tandjaoui Amina; Mangelinck-Noel Nathalie; Reinhart Guillaume; Billia Bernard; Guichard Xavier
journal (abréviation) Comptes Rendus Physique (Compt Rendus Phys)
volume (numéro) 14 (2-3)
pages 141 – 148
résumé Multi-crystalline silicon solidification is investigated by performing directional solidification experiments. Twinning phenomenon has been identified and observed in situ and in real time during the solidification using X-ray synchrotron imaging techniques: radiography and topography. The radiography observations give information on the formation, birth localized at the interface and evolution of the twins during solidification. The topography results give further information on the grain arrangement and on new grains in twinned position and grain growth competition. We have evidenced two twinning mechanisms: the first is the multiple twin formations during the growth of one grain. The second is the nucleation of a grain in twinned position at the bottom of a grain boundary groove.
mots clés Silicon; Solidification; X-ray radiography; Synchrotron; Twins; Grain competition
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